BUK9520-100A 데이터 시트보기 (PDF) - NXP Semiconductors.
부품명
상세내역
제조사
BUK9520-100A Datasheet PDF : 14 Pages
| |||
NXP Semiconductors
BUK9520-100A
N-channel TrenchMOS logic level FET
250
ID
(A)
200
150
100
50
0
0
VGS (V) = 10
03nd85
4.6
5
4
3
2.2
2
4
6
8
10
VDS (V)
16
RDSon
(mΩ)
15
03nd84
14
13
12
2
4
6
8
10
VGS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
10-1
ID
(A)
10-2
10-3
10-4
10-5
03aa36
min
typ
max
120
gfs
(S)
100
80
60
40
20
03nd82
10-6
0
1
2
3
VGS (V)
0
0
20
40
60
80
ID (A)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
BUK9520-100A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 7 February 2011
© NXP B.V. 2011. All rights reserved.
6 of 13
Share Link: 