BUK9520-100A 데이터 시트보기 (PDF) - NXP Semiconductors.
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BUK9520-100A Datasheet PDF : 14 Pages
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NXP Semiconductors
BUK9520-100A
N-channel TrenchMOS logic level FET
80
ID
(A)
60
40
20
0
0
03nd83
Tj = 175 °C
Tj = 25 °C
1
2
3
VGS (V)
5
VGS
(V)
4
VDD = 14 V
03nd81
3
VDD = 80 V
2
1
0
0
20
40
60
80
100
QG (nC)
Fig 9. Transfer characteristics: drain current as a
Fig 10. Gate-source threshold voltage as a function of
function of gate-source voltage; typical values
junction temperature
2.5
VGS(th)
(V)
2
1.5
max
typ
03aa33
40
RDSon
(mΩ)
30
03nd86
VGS (V) = 3 3.2 3.4 3.6 3.8 5
1
min
20
0.5
0
-60
0
60
120
180
Tj (°C)
10
0
50
100
150
200
250
ID (A)
Fig 11. Gate-source threshold voltage as a function of Fig 12. Drain-source on-state resistance as a function
junction temperature
of drain current; typical values
BUK9520-100A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 7 February 2011
© NXP B.V. 2011. All rights reserved.
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