NXP Semiconductors
3
03aa29
a
2
1
BUK9520-100A
N-channel TrenchMOS logic level FET
12000
C
(pF)
8000
Ciss
Coss
Crss
4000
03nd87
0
-60
0
60
120
180
Tj (°C)
0
10−2
10−1
1
10
102
VDS (V)
Fig 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
100
IS
(A)
80
Tj = 175 °C
03nd80
60
Tj = 25 °C
40
20
0
0
0.5
1.0
1.5
VSD (V)
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
BUK9520-100A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 7 February 2011
© NXP B.V. 2011. All rights reserved.
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