PXT3906 데이터 시트보기 (PDF) - Philips Electronics
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PXT3906 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP switching transistor
Product specification
PXT3906
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS VALUE
UNIT
Rth j-a
Rth j-s
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
note 1
104
K/W
24
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
IEBO
hFE
VCEsat
VBEsat
Cc
Ce
fT
F
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
IE = 0; VCB = −30 V
IC = 0; VEB = −6 V
VCE = −1 V; (see Fig.2)
IC = −0.1 mA
IC = −1 mA
IC = −10 mA
IC = −50 mA
IC = −100 mA
IC = −10 mA; IB = −1 mA
IC = −50 mA; IB = −5 mA
IC = −10 mA; IB = −1 mA
IC = −50 mA; IB = −5 mA
IE = ie = 0; VCB = −5 V; f = 1 MHz
IC = ic = 0; VEB = −500 mV; f = 1 MHz
IC = −10 mA; VCE = −20 V; f = 100 MHz
IC = −100 µA; VCE = −5 V; RS = 1 kΩ;
f = 10 Hz to 15.7 kHz
−
−
60
80
100
60
30
−
−
−650
−
−
−
250
−
Switching times (between 10% and 90% levels); (see Fig.3)
ton
turn-on time
td
delay time
tr
rise time
toff
turn-off time
ts
storage time
tf
fall time
ICon = −10 mA; IBon = −1 mA; IBoff = 1 mA −
−
−
−
−
−
MAX.
−50
−50
UNIT
nA
nA
−
−
300
−
−
−250
−400
−850
−950
4.5
10
−
4
mV
mV
mV
mV
pF
pF
MHz
dB
65
ns
35
ns
35
ns
300
ns
225
ns
75
ns
1999 Apr 14
3
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