BFR96TS 데이터 시트보기 (PDF) - Vishay Semiconductors

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BFR96TS

Silicon NPN Planar RF Transistor

Vishay Semiconductors 

Not for new design, this product will be obsoleted soon

BFR96TS

Vishay Semiconductors

Silicon NPN Planar RF Transistor

Features

3

• High power gain

• Low noise figure

e3

• High transition frequency

• Lead (Pb)-free component

2

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Applications

RF amplifier up to GHz range specially for wide band

antenna amplifier.

Mechanical Data

Case: TO-50 Plastic case

Weight: approx. 111 mg

Marking: BFR96TS

Pinning: 1 = Collector, 2 = Emitter, 3 = Base

3B

2

E

1

1C

19039

Electrostatic sensitive device.

Observe precautions for handling.

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Total power dissipation

Junction temperature

Tamb ≤ 45 °C

Storage temperature range

Symbol

Value

Unit

VCBO

20

V

VCEO

15

V

VEBO

2.5

V

IC

100

mA

Ptot

700

mW

Tj

150

°C

Tstg

- 65 to + 150

°C

Maximum Thermal Resistance

Parameter

Test condition

Symbol

Value

Unit

Junction ambient

1)

RthJA

150

K/W

1) on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35 μm Cu

Document Number 85037

Rev. 1.6, 08-Sep-08

www.vishay.com

1

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