IS42S16100-7T 데이터 시트보기 (PDF) - Integrated Circuit Solution Inc

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IS42S16100-7T

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

Integrated Circuit Solution Inc 

IS42S16100

ABSOLUTE MAXIMUM RATINGS(1)

Symbol

Parameters

Rating

Unit

VCC MAX

Maximum Supply Voltage

–1.0 to +4.6

V

VCCQ MAX

Maximum Supply Voltage for Output Buffer

–1.0 to +4.6

V

VIN

Input Voltage

–1.0 to +4.6

V

VOUT

Output Voltage

–1.0 to +4.6

V

PD MAX

Allowable Power Dissipation

1

W

ICS

Output Shorted Current

50

mA

TOPR

Operating Temperature

0 to +70

°C

TSTG

Storage Temperature

–55 to +150

°C

DC RECOMMENDED OPERATING CONDITIONS(2) (At TA = 0 to +70°C)

Symbol

Parameter

Min.

Typ.

Max.

Unit

VCC, VCCQ

VIH

VIL

Supply Voltage

Input High Voltage(3)

Input Low Voltage(4)

3.0

3.3

3.6

V

2.0

— VDD + 0.3 V

-0.3

—

+0.8

V

CAPACITANCE CHARACTERISTICS(1,2) (At TA = 0 to +25°C, Vcc = VccQ = 3.3 ± 0.3V, f = 1 MHz)

Symbol

Parameter

Typ. Max. Unit

CIN1

CIN2

Input Capacitance: A0-A11

—

Input Capacitance: (CLK, CKE, CS, RAS, CAS, WE, LDQM, UDQM) —

4

pF

4

pF

CI/O

Data Input/Output Capacitance: I/O0-I/O15

—

5

pF

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device.

This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in

the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended

periods may affect reliability.

2. All voltages are referenced to GND.

3. VIH (max) = VCCQ + 2.0V with a pulse width < 3 ns.

4. VIL (min) = GND – 2.0V with a pulse < 3 ns and -1.5V with a pulse < 5ns.

4

Integrated Circuit Solution Inc.

DR006-0B

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