ESDA6V1U1 데이터 시트보기 (PDF) - STMicroelectronics

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ESDA6V1U1

TRANSIL™ ARRAY FOR ESD PROTECTION

STMicroelectronics 

ESDA6V1U1

ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)

Symbol

Parameter

VPP

Electrostatic discharge

MIL STD 883C - Method 3015-6

PPP

Peak pulse power (8/20µs)

Tstg

Storage temperature range

Tj

Maximum junction temperature

TL

Maximum lead temperature for soldering during 10s

Value

Unit

25

kV

200

W

- 55 to + 150 °C

125

°C

260

°C

ELECTRICAL CHARACTERISTICS (Tamb = 25°C)

Symbol

Parameter

VRM

Stand-off voltage

VBR

Breakdown voltage

VCL

Clamping voltage

IRM

Leakage current

IPP

Peak pulse current

αT

Voltage temperature coefficient

C

Capacitance

Rd

Dynamic resistance

VF

Forward voltage drop

Types

VBR @

IR

min. max.

V

V mA

ESDA6V1U1 6.1 7.2 1

note 1 : Square pulse, Ipp = 25A, tp=2.5µs.

note 2 : ∆ VBR = αT* (Tamb -25°C) * VBR (25°C)

IRM @ VRM

max.

µA

V

2

5

Rd

typ.

note 1

Ω

0.5

αT

max.

note 2

10-4/°C

6

C

typ.

0V bias

pF

100

VF @ IF

max.

V mA

1.5 200

2/6

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