BCR3AS-12 데이터 시트보기 (PDF) - Kersemi Electronic Co., Ltd.
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BCR3AS-12 Datasheet PDF : 13 Pages
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BCR3AS-12
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Notes: 1. Gate open.
Symbol
IT(RMS)
ITSM
I2t
PGM
PG(AV)
VGM
IGM
Tj
Tstg
—
Ratings
3
30
3.7
3
0.3
6
0.3
– 40 to +125
– 40 to +125
0.26
Unit
Conditions
A
Commercial frequency, sine full wave
360° conduction, Tc = 108°CNote3
A
60Hz sinewave 1 full cycle, peak value,
non-repetitive
A2s
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
W
W
V
A
°C
°C
g
Typical value
Electrical Characteristics
Parameter
Symbol Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak off-state current
IDRM
—
—
2.0
mA Tj = 125°C, VDRM applied
On-state voltage
VTM
—
—
1.7
V
Tc = 25°C, ITM = 4.5 A,
Instantaneous measurement
Gate trigger voltageNote2
I
VFGT I
—
—
1.5
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
II
VRGT I
—
—
1.5
V
RG = 330 Ω
III
VRGT III
—
Gate trigger current Note2
I
IFGT I
—
—
1.5
V
—
15
mA Tj = 25°C, VD = 6 V, RL = 6 Ω,
II
IRGT I
—
—
15
mA RG = 330 Ω
III
IRGT III
—
—
15
mA
Gate non-trigger voltage
Thermal resistance
VGD
0.2
—
—
V
Tj = 125°C, VD = 1/2 VDRM
Rth(j-c)
—
—
3.8
°C/W Junction to caseNote3
Critical-rate of rise of off-state
commutating voltage Note4
(dv/dt)c
5
—
—
V/µs Tj = 125°C
Notes: 2. Measurement using the gate trigger characteristics measureme circuit.
3. Case temperature is measured on the T2 tab.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = –1.5 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
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