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BCR3AS-12 데이터 시트보기 (PDF) - Kersemi Electronic Co., Ltd.

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BCR3AS-12
KERSEMI
Kersemi Electronic Co., Ltd. KERSEMI
BCR3AS-12 Datasheet PDF : 13 Pages
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BCR3AS-12
Breakover Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
60 40 20 0 20 40 60 80 100120 140
Junction Temperature (°C)
Commutation Characteristics
7
5 Main Voltage
4
(dv/dt)c
3
Main Current
IT
2
τ
101
Time
VD
(di/dt)c
Time
Typical Example
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
7
5
4 Minimum
3 Characteristics
Value
2
III Quadrant
100
7
100
I Quadrant
2 3 4 5 7 101
2 3 4 5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Characteristics Test Circuits
6
6
6V
A
6V
A
V
330
V
330
Test Procedure I
6
Test Procedure II
6V
A
V
330
Test Procedure III
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
Typical Example
140
Tj = 125°C
120
100
III Quadrant
80
60
40
I Quadrant
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/µs)
Gate Trigger Current vs.
Gate Current Pulse Width
103
7
Typical Example
5
IRGT III
4
3
IRGT I
2
IFGT I
102
7
5
4
3
2
101
100 2 3 4 5 7 101 2 3 4 5 7 102
Gate Current Pulse Width (µs)
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