TGA8310-SCC 데이터 시트보기 (PDF) - TriQuint Semiconductor
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TGA8310-SCC Datasheet PDF : 11 Pages
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TGA8310-SCC
RF CHARACTERISTICS
DC CHARACTERISTICS
PARAMETER
GP
Small-signal power gain
NF
Noise figure
SWR(in) Input standing wave ratio
SWR(out) Output standing wave ratio
P 1dB Output power at 1-dB gain compression
IP3 Output third–order intercept point
Output second–order intercept point
Output third harmonic
at 1–dB gain compression
Output second harmonic
at 1–dB gain compression
TEST CONDITIONS
f = 2 t o 20 GHz
VD = 5 V
V+ = 8 V
f = 2 GHz
VD = 5 V
V+ = 8 V
f = 6 GHz
VD = 5 V
V+ = 8 V
f = 10 GHz
VD = 5 V
V+ = 8 V
f = 18 GHz
VD = 5 V
V+ = 8 V
f = 2 to 20 GHz
VD = 5 V
V+ = 8 V
f = 2 to 20 GHz
VD = 5 V
V+ = 8 V
f = 2 to 20 GHz
VD = 5 V
V+ = 8 V
f = 2 G Hz
f = 6 G Hz
f = 9 GHz
VD = 5 V
f = 1 2 G Hz
f = 1 8 G Hz
fo = 2 GHz
f o = 4 GHz
VD = 5 V
fo = 6 GHz
fo = 9 GHz
fo = 2 GHz
f o = 4 GHz
VD = 5 V
fo = 6 GHz
fo = 2 GHz
fo = 4 GHz
VD = 5 V
fo = 6 GHz
fo = 9 GHz
VD = 5 V, VCTRL = 1.5 V, I+ = 60 mA, TA = 25°C
* Unit dBc applies to decibels with r espect to the carrier or fundamental fr equenc,y fo.
TYP
9.0
8.5
4.6
4.4
2.7
2.5
3.1
3.2
5.6
5.4
1.4:1
1.4:1
1.4:1
1.4:1
17.5
16.5
29.5
27.0
27.5
26.5
27.0
32.5
29.5
29.0
28.0
-29.0
-24.5
-19.5
-18.0
-15.0
-13.5
-15.5
UNIT
dB
dB
--
--
dBm
dBm
dBm
dBc*
dBc*
PARAMETER
I DSS Zero–gate–voltage drain current at saturation
TEST CONDITIONS
VDS = 0.5 V to 3.5 V, VGS = 0
MIN MAX UNIT
97 292 mA
TA = 25°C
VDS for IDSS is the drain voltage between 0.5 V and 3.5 V at which drain current is highest at dc autoprobe.
THERMAL INFORMATION
PARAMETER
R JC Thermal resistance (channel to backside)
TEST CONDITIONS
V CTRL = 1.5 V,
V+ = 8 V
I + = 60 mA
VD = 5 V
NOM UNIT
12 °C/W
20
7
TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com
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