DIM800FSS17-A000 데이터 시트보기 (PDF) - Dynex Semiconductor

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DIM800FSS17-A000

Single Switch IGBT Module

Dynex Semiconductor 

DIM800FSS17-A000

ABSOLUTE MAXIMUM RATINGS

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme

conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions

should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

Tcase = 25˚C unless stated otherwise

Symbol

Parameter

Test Conditions

VCES

VGES

IC

I

C(PK)

Pmax

I2t

Visol

Q

PD

Collector-emitter voltage

VGE = 0V

Gate-emitter voltage

-

Continuous collector current

Tcase = 68˚C

Peak collector current

1ms, Tcase = 105˚C

Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C

Diode I2t value

V = 0, t = 10ms, T = 125˚C

R

p

vj

Isolation voltage - per module

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

Partial discharge - per module

IEC1287. V1 = 1500V, V2 = 1100V, 50Hz RMS

Max. Units

1700 V

±20 V

800 A

1600 A

6000 W

120 kA2s

4000 V

10 PC

2/10

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

www.dynexsemi.com

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