BCW66H 데이터 시트보기 (PDF) - NXP Semiconductors.
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BCW66H Datasheet PDF : 14 Pages
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Nexperia
BCW66 series
45 V, 800 mA NPN general-purpose transistor
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.50
0.33
0.20
0.10
0.05
10 0.02
0.01
aaa-026538
0
1
10-5
10-4
10-3
10-2
10-1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Figure 2. Transient thermal impedance from junction to ambient as a function of pulse
duration; typical values
10 Electrical characteristics
Table 7. Electrical characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
collector-base
cut-off current
IEBO
emitter-base
cut-off current
VCB = 40 V; IE = 0 A
VCB = 40 V; IE = 0 A; Tj = 150 °C
VEB = 5 V; IC = 0 A
hFE
VCEsat
VBEsat
fT
Cc
DC current gain
BCW66F/G/H
BCW66F/G/H
VCE = 1 V; IC = 100 μA
VCE = 1 V; IC = 1 mA
BCW66F/G/H
VCE = 1 V; IC = 10 mA
BCW66F
VCE = 1 V; IC = 100 mA
[1]
BCW66G
[1]
BCW66H
[1]
BCW66F/G/H
VCE = 1 V; IC = 500 mA
[1]
collector-emitter
IC = 100 mA; IB = 10 mA
[1]
saturation voltage
IC = 500 mA; IB = 50 mA
[1]
base-emitter
IC = 100 mA; IB = 10 mA
[1]
saturation voltage
IC = 500 mA; IB = 50 mA
[1]
transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz
collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz
[1] pulsed; tp≤ 300 μs; δ ≤ 0.02
Min Typ Max Unit
-
-
20
nA
-
-
5
μA
-
-
20
nA
75
-
75
-
75
-
100
-
160
-
250
-
40
-
-
-
-
-
-
-
-
-
100
-
-
3
-
-
-
250
400
630
-
350
mV
450
mV
1.25 V
1.25 V
-
MHz
-
pF
BCW66x_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 21 April 2017
© Nexperia B.V. 2017. All rights reserved.
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