AS5SS256K18 데이터 시트보기 (PDF) - Micross Components

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AS5SS256K18

256K x 18 SSRAM Synchronous Burst SRAM, Flow-Through

Micross Components 

SSRAM

AS5SS256K18

AC TEST CONDITIONS

Input pulse levels

Input rise and fall times

Input timing reference levels

Output reference levels

Output load

VIH = (VDD/2.2) + 1.5V

VIL = (VDD/2.2) - 1.5V

1ns

VDD/2.2

VDDQ/2.2

See Figures 1 and 2

LOAD DERATING CURVES

The 256K x 18 Synchronous Burst SRAM timing is dependent upon

the capacitive loading on the outputs.

OUTPUT LOADS

DQ

Z0=50

50

Vt = 1.5V

Fig. 1 OUTPUT LOAD EQUIVALENT

3.3v

SNOOZE MODE

SNOOZE MODE is a low-current, “power-down” mode in which the

device is deselected and current is reduced to ISB2Z. The duration of

SNOOZE MODE is dictated by the length of time ZZ is in a HIGH

state. After the device enters SNOOZE MODE, all inputs except ZZ

become gated inputs and are ignored.

ZZ is an asynchronous, active HIGH input that causes the device

to enter SNOOZE MODE. When ZZ becomes a logic HIGH, ISB2Z

is guaranteed after the setup time tZZ is met. Any READ or WRITE

operation pending when the device enters SNOOZE MODE is not

quaranteed to complete successfully. Therefore, SNOOZE MODE

must not be initiated until valid pending operations are completed.

DQ

351

317

5 pF

Fig. 2 OUTPUT LOAD EQUIVALENT

SNOOZE MODE ELECTRICAL CHARACTERISTICS

DESCRIPTION

CONDITIONS SYM

MIN

MAX

Current during SNOOZE MODE

ZZ > VIH

ISB2Z

45

ZZ active to input ignored

tZZ

tKC

ZZ inactive to input sampled

tRZZ

tKC

ZZ active to snooze current

tZZI

tKC

ZZ inactive to exit snooze current

NOTE: 1. This parameter is sampled.

tRZZI

0

SNOOZE MODE WAVEFORM

UNITS

mA

ns

ns

ns

ns

NOTES

1

1

1

1

CLK

ZZ

I

SUPPLY

ALL INPUTS*

tZZ

tZZI

ISB2

tRZZ

tRZZI

AS5SS256K18

Rev. 2.5 10/13

* Except ZZ

Don’t Care

Micross Components reserves the right to change products or specifications without notice.

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