Surface Mount NPN/ PNP
Complementary Transistor
2N4854U (TX, TXV)
Electrical Characteristics (TA = 25° C unless otherwise noted)
SYMBOL
PARAMETER
MIN MAX UNITS
TEST CONDITIONS
ON CHARACTERISTICS
VCE (SAT) Collector‐Emi er Satura on Voltage
VBE(SAT) Base‐Emi er Satura on Voltage
0.40
0.8
V IC = 150 mA, IB= 15 mA(2)
V IC = 150 mA, IB= 15 mA(2)
SMALL‐SIGNAL CHARACTERISTICS
| hie |
Small Signal Common Emi er Input
Impedance
1.5 9 kΩ
| hoe |
Small Signal Common Emi er Output
Admi ance
50 µmho VCE = 10 V, IC = 1.0 mA, f = 1.0 kHZ
hfe Small Signal Current Transfer Ra o
60 300 ‐
NF Noise Figure
| hfe |
Small Signal Forward Current Transfer
Ra o
Cobo Open Circuit Output Capacitance
SWITCHING CHARACTERISTICS
ton Turn‐On Time
toff Turn‐Off Time
8
db f = 1.0 kHZ, RG = 1.0 kΩ, IC = 0.1 mA, VCE = 10 V
28
‐ VCE = 20 V, IC = 20 mA, f = 100 MHz
8
pF VCB = 10 V, 100 kHz ≤ f ≤ 1.0 MHZ
45
ns VCC = 30 V, IC = 150 mA, IB1 = 15 mA
300 ns VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA
Note: 1. Derate linearly 6.6 mW/°C above 25° C
2. Pulse Width ≤300 µs, Duty Cycle ≤ 2.0%
3. Polari es given are for the NPN device. Reverse polarity on limits & condi ons
as applicable for the PNP side.
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
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OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue C 08/2016 Page 3