DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

ESDA17 데이터 시트보기 (PDF) - STMicroelectronics

부품명
상세내역
제조사
ESDA17
ST-Microelectronics
STMicroelectronics ST-Microelectronics
ESDA17 Datasheet PDF : 5 Pages
1 2 3 4 5
ESDA17/19-5SC6
Fig. 1: Relative variation of peak pulse power
versus initial junction temperature.
PPP [Tj initial] / PPP [Tj initial = 25°C]
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
Tj (°C)
25
50
75
100
125
150
Fig. 2: Peak pulse power versus exponential pulse
duration.
PPP(W)
1000
Tj initial = 25°C
100
10
1
tp (µs)
10
100
Fig. 3: Clamping voltage versus peak pulse
current (typical values, rectangular waveform).
IPP(A)
100.0
Fig. 4: Forward voltage drop versus peak forward
current (typical values).
IFM(A)
1.E+00
10.0
1.0
ESDA17-5SC6
ESDA19-5SC6
1.E-01
1.E-02
Tj =125°C
Tj =25°C
0.1
0
VCL(V)
tP=2.5µs
Tj initial =25°C
10
20
30
40
50
60
70
VFM(V)
1.E-03
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Fig. 5: Junction capacitance versus reverse volt-
age applied (typical values).
C(pF)
40
35
30
F=1MHz
Vosc=30mVRMS
Tj=25°C
25
20
15
10
5
VR(V)
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
Fig. 6: Relative variation of leakage current versus
junction temperature (typical values).
IR [Tj] / IR [Tj = 25°C]
100
VR =14V
10
1
25
Tj(°C)
50
75
100
125
3/5

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]