FCX605TA 데이터 시트보기 (PDF) - Diodes Incorporated.

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FCX605TA

120V NPN HIGH VOLTAGE DARLINGTON TRANSISTOR

Diodes Incorporated. 

FCX605

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage (Note 9)

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter-base Cut-off Current

Collector Emitter Cut-Off Current

ON CHARACTERISTICS (Note 9)

Static Forward Current Transfer Ratio

Symbol

BVCBO

BVCEO

BVEBO

ICBO

IEBO

ICES

hFE

Min Typ

140

—

120

—

10

—

—

—

—

—

—

—

—

—

2k

—

5k

—

2k

—

0.5

—

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter Turn-On Voltage

SMALL SIGNAL CHARACTERISTICS (Note 9)

Transition Frequency

Input Capacitance

Output Capacitance

Turn-On Time

VCE(SAT)

VBE(SAT)

VBE(ON)

fT

Cibo

Cobo

tON

—

—

—

—

—

—

150

—

—

90

—

15

—

0.5

Turn-Off Time

tOFF

—

1.6

Note:

9. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.

Max

—

—

—

100

10

0.1

10

—

—

100k

—

1

1.5

1.8

1.7

—

—

—

—

—

Unit

Test Condition

V IC = 100µA

V ICEO = 10mA

V IEBO = 100µA

nA VCB = 10V

µA VCB = 120V, TA = +100°C

µA VEB = 8V

µA VCES = 120V

IC = 50mA, VCE = 5V

— IC = 500mA, VCE = 5V

IC = 1A, VCE = 5V

IC = 2A, VCE = 5V

V IC = 250mA, IB = 0.25mA

IC = 1A, IB = 1mA

V IC = 1A, IB = 1mA

V IC = 1A, VCE = 5V

MHz

pF

pF

µs

µs

IC = 100mA, VCE = 10V

f = 20MHz

VCB = 500mV, f = 1MHz

VCB = 10V, f = 1MHz

IC = 500mA, VCE = 10V

IB1 = -IB2 = 0.5mA

IC = 500mA, VCE = 10V

IB1 = -IB2 = 0.5mA

FCX605

Document number: DS33065 Rev. 3 - 2

4 of 7

www.diodes.com

December 2016

© Diodes Incorporated

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