ZHCS500QTA 데이터 시트보기 (PDF) - Diodes Incorporated.

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ZHCS500QTA

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Diodes Incorporated. 

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Continuous Reverse Voltage

Continuous Forward Current

Forward Voltage @ IF = 500mA

Average Peak Forward Current; D.C. = 50%

Non Repetitive Forward Current

t100µs

t10ms

Symbol

VR

IF

VF

IFAV

IFSM

Value

40

500

550

1000

6.75

3

ZHCS500

Unit

V

mA

mV

mA

A

A

Thermal Characteristics

Characteristic

Power Dissipation, TA = +25°C

Junction Temperature

Storage Temperature Range

Symbol

PD

TJ

TSTG

Value

330

125

-55 to +150

Unit

mW

°C

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Reverse Breakdown Voltage

Forward Voltage (Note 6)

Reverse Current

Diode Capacitance

Symbol Min

Typ

V(BR)R

40

60

—

270

—

300

—

370

—

465

VF

—

550

—

640

—

810

—

440

IR

—

15

CD

—

20

Reverse Recovery Time

tRR

—

10

Notes: 6. Measured under pulsed conditions. Pulse width = 300μS. Duty cycle = 2%.

Max

—

300

350

460

550

670

780

1050

—

40

—

—

Unit

Test Condition

V IR = 200µA

IF = 50mA

IF = 100mA

IF = 250mA

mV IF = 500mA

IF = 750mA

IF = 1A

IF = 1.5A

IF = 500mA, TA = +100°C

µA VR = 30V

pF f = 1MHz, VR = 25V

Switched from IF = 500mA to

ns IR = 500mA

Measured @ IR = 50mA

ZHCS500

Document number: DS33216 Rev. 7 - 2

2 of 5

www.diodes.com

December 2018

© Diodes Incorporated

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