FMBT3904W-H 데이터 시트보기 (PDF) - Formosa Technology

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FMBT3904W-H

SMD NPN Transistor

Formosa Technology 

SMD NPN Transistor

FMBT3904W

200mA Silicon NPN Epitaxial Planar

Transistor

Features

• High collector-emitterbreakdien voltage.

(BVCEO = 40V@IC=1mA)

• Small load switch transistor with high gain and low

stauration voltage, is designed for general purpose

amflifier and switching applications at collector current.

• Capable of 150mW power dissipation.

• Lead-free parts for green partner, exceeds environmental

standards of MIL-STD-19500 /228

• Suffix "-H" indicates Halogen-free part, ex.FMBT3904W-H.

Mechanical data

• Epoxy:UL94-V0 rated flame retardant

• Case : Molded plastic, SOT-323

• Terminals : Solder plated, solderable per

MIL-STD-750, Method 2026

• Mounting Position : Any

• Weight : Approximated 0.006 gram

Formosa MS

Package outline

SOT-323

(B)

(C)

(A)

0.054 (1.35)

0.046 (1.15)

0.096 (2.40)

0.080 (2.00)

0.021 (0.53)

0.017 (0.42)

0.040 (1.00)

0.032 (0.80)

Dimensions in inches and (millimeters)

Maximum ratings (AT TA=25oC unless otherwise noted)

PARAMETER

CONDITIONS

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector current

Total device dissipation

TA = 25OC

Thermal resistance

Junction to ambient

Operating junction temperature range

Storage temperature range

Symbol

VCBO

VCEO

VEBO

IC

MIN.

TYP.

MAX. UNIT

60

V

40

V

6.0 V

200 mA

PD

150 mW

RθJA

TJ

-55

TSTG

-55

833 OC/W

+150 oC

+150 oC

http://www.formosams.com/

TEL:886-2-22696661

FAX:886-2-22696141

Page 2

Document ID Issued Date

DS-231120 2008/02/10

Revised Date Revision

2010/03/10

B

Page.

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