FPN560A 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FPN560A Datasheet PDF : 4 Pages
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Typical Characteristics
NPN Low Saturation Transistor
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
1.4
β = 10
1.2
1
- 40 °C
0.8
0.6
25 °C
0.4
125 °C
0.2
0.001
0.01
0.1
1
10
I C- COLLECTOR CURRENT (A)
Base-Emitter On Voltage vs.
Collector Current
1.4
Vce = 2.0V
1.2
1
- 40 °C
0.8
0.6
25 °C
0.4
125 °C
0.2
0.0001 0.001
0.01
0.1
1
10
I C - COLLECTOR CURRENT (A)
Collector-Emitter Saturation
Voltage vs Collector Current
0.8
β = 10
0.6
125°C
25°C
0.4
- 40°C
0.2
0
0.001
0.01
0.1
1
10
I C- COLLECTOR CURRENT (A)
Input/Output Capacitance vs.
Reverse Bias Voltage
450
f = 1.0 MHz
400
350
C ibo
300
250
200
150
100
C obo
50
0
0.1 0.2
0.5 1 2
5 10 20
VCE - COLLECTOR VOLTAGE (V)
50 100
Current Gain vs. Collector Current
500
125°C
Vce = 2.0V
400
300
25°C
200
- 40°C
100
0
0.0001
0.001
0.01
0.1
12 5
I C - COLLECTOR CURRENT (A)
Power Dissipation vs
Ambient Temperature
1
TO-226
0.75
0.5
0.25
0
0
25
50
75 100 125 150
TE MPERATURE (°C)
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