FPN660A 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FPN660A Datasheet PDF : 5 Pages
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Typical Characteristics
β = 10 Base-Emitter Saturation
β = 10ββ=V=11o00ltage vs Collector Current
1.4
β=
10β
=
10
1.2
1
- 40°C
0.8
0.6
25°C
0.4
125°C
0.2
0.001
0.01
0.1
1
10
I C - COLLECTOR CURRENT (A)
Figure 1. Base-Emitter Saturation Voltage
vs Collector Current
Collector-Emitter Saturation
β = 10 Voltage vs Collector Current
0.8 β = 10
β = 10β = 10
0.β7= 10β = 10
0.6
125°C
0.5
25°C
0.4
0.3
- 40°C
0.2
0.1
0
0.01
0.1
1
10
I C - COLLECTOR CURRENT (A)
Figure 3. Collector-Emitter Saturation Voltage
vs Collector Current
Current Gain vs. Collector Current
1000
900
125°C
Vce = 2.0V
800
700
600
25°C
500
400
300
- 40°C
200
100
0
0.0001 0.001 0.01
0.1
1
10
I C - COLLECTOR CURRENT (A)
Figure 5. Current Gain vs Collector Current
Base-Emitter On Voltage vs.
Collector Current
1.6
Vce = 2.0V
1.4
1.2
1
- 40°C
0.8
0.6
25°C
0.4
125°C
0.2
0.0001 0.001
0.01
0.1
1
10
I C - COLLECTOR CURRENT (A)
Figure 2. Base-Emitter On Voltag
vs Collector Current
Input/Output Capacitance vs.
Reverse Bias Voltage
400
f V=ce1=.02M.0HVz
350
Cobo
300
250
200
150
C ibo
100
50
0
0.1
0.5 1
10 20 50 100
V CE - COLLECTOR VOLTAGE (V)
Figure 4. Input/Output Capacitance
vs Reverse Bias Voltage
Ambient Temperature
1
TO- 226
0.75
0.5
0.25
0
0
25
50
75 100 125 150
TEMPERATURE (°C)
Figure 6. Power Dissipation vs Ambient Temperature
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
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