Philips Semiconductors
PDTC144V series
NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ
103
hFE
102
10
006aaa099
(2) (1)
(3)
1
VCEsat
(V)
10−1
006aaa100
(1)
(2)
(3)
1
10−1
1
10
102
IC (mA)
VCE = 5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
006aaa101
10
VI(on)
(1)
(V)
(2)
(3)
10−2
1
10
102
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa102
10
VI(off)
(1)
(V)
(2)
(3)
1
10−1
1
10
102
IC (mA)
1
10−1
1
10
IC (mA)
VCE = 0.3 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 3. On-state input voltage as a function of collector
current; typical values
VCE = 5 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 4. Off-state input voltage as a function of collector
current; typical values
9397 750 14016
Product data sheet
Rev. 03 — 15 February 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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