FZT796A
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Collector-Base Breakdown Voltage
BVCBO
-200
—
Collector-Emitter Breakdown Voltage (Note 9)
BVCEO
-200
—
Emitter-Base Breakdown Voltage
Collector-Base Cut-Off Current
Collector-Emitter Cut-Off Current
Emitter Cut-Off Current
BVEBO
-7
—
ICBO
—
—
ICES
—
—
IEBO
—
—
DC Current Gain (Note 9)
300
—
300
—
hFE
250
—
100
—
—
Collector-Emitter Saturation Voltage (Note 9)
VCE(sat)
—
—
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-On Voltage (Note 9)
Input Capacitance
Output Capacitance
VBE(sat)
—
VBE(on)
—
Cibo
—
Cobo
—
—
—
—
—
-0.67
225
12
Current Gain-Bandwidth Product
fT
100
—
Turn-On Time
Turn-Off Time
ton
—
100
toff
—
3,200
Note:
9. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.
Max
—
—
—
-100
-100
-100
800
—
—
—
-200
-300
-300
-0.95
—
—
—
—
—
—
Unit
V
V
V
nA
nA
nA
—
mV
V
V
pF
pF
MHz
ns
ns
Test Condition
IC = -100µA
IC = -10mA
IE = -100µA
VCB = -150V
VCE = -150V
VEB = -6V
IC = -10mA, VCE = -10V
IC = -100mA, VCE = -10V
IC = -300mA, VCE = -10V
IC = -400mA, VCE = -10V
IC = -50mA, IB = -2mA
IC = -100mA, IB = -5mA
IC = -200mA, IB = -20mA
IC = -200mA, IB = -20mA
IC = -200mA, VCE = -10V
VEB = -0.5V, f = 1MHz
VCB = -10V, f = 1MHz
VCE = -5V, IC = -50mA,
f=50MHz
VCC = -50V, IC = -100mA
IB1 = -IB2 = 10mA
FZT796A
Document number: DS33172 Rev. 4 - 2
4 of 7
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October 2015
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