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FZT688B

12V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223

Diodes Incorporated. 

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Collector-Base Breakdown Voltage

BVCBO

12

—

Collector-Emitter Breakdown Voltage (Note 11)

BVCEO

12

—

Emitter-Base Breakdown Voltage

Collector-Base Cut-Off Current

Collector-Emitter Cut-Off Current

Emitter Cut-Off Current

BVEBO

7

—

ICBO

—

—

ICES

—

—

IEBO

—

—

DC Current Gain (Note 9)

500

—

hFE

400

—

100

—

—

—

—

—

Collector-Emitter Saturation Voltage (Note 11)

VCE(sat)

—

—

—

—

—

—

Base-Emitter Saturation Voltage (Note 11)

Base-Emitter Turn-On Voltage (Note 11)

Input Capacitance

Output Capacitance

Current Gain-Bandwidth Product

Turn-On Time

Turn-Off Time

VBE(sat)

—

—

VBE(on)

—

—

Cibo

—

200

Cobo

—

40

fT

150

—

ton

—

40

toff

—

500

Note:

11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

Max

—

—

—

50

50

50

—

—

—

40

60

180

350

400

1.1

1

—

—

—

—

—

FZT688B

Unit

V

V

V

nA

nA

nA

—

mV

V

V

pF

pF

MHz

ns

ns

Test Condition

IC = 100µA

IC = 10mA

IE = 100µA

VCB = 10V

VCE = 10V

VEB = 6V

IC = 0.1A, VCE = 2V

IC = 3A, VCE = 2V

IC = 10A, VCE = 2V

IC = 0.1A, IB = 1mA

IC = 0.1A, IB = 0.5mA

IC = 1A, IB = 50mA

IC = 3A, IB = 20mA

IC = 4A, IB = 50mA

IC = 3A, IB = 20mA

IC = 3A, VCE = 2V

VEB = 0.5V, f = 1MHz

VCB = 10V, f = 1MHz

VCE = 5V, IC = 50mA, f=50MHz

VCC = 10V, IC = 500mA

IB1 = -IB2 = 50mA

FZT688B

Document number: DS33154 Rev. 4 - 2

4 of 7

www.diodes.com

January 2016

© Diodes Incorporated

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