FZT688B 데이터 시트보기 (PDF) - TY Semiconductor

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FZT688B

NPN Silicon Planar Medium Power High Gain Transistor

TY Semiconductor 

SMD Type

Electrical Characteristics Ta = 25

Parameter

Breakdown Voltages

Breakdown Voltages

Breakdown Voltages

Collector Cut-Off Current

Emitter Cut-Off Current

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

Base-Emitter Turn-On Voltage *

Static Forward Current Transfer Ratio*

Transitional frequency

Input capacitance

Output capacitance

Turn-on time

Turn-off time

* Pulse test: tp = 300 ìs; d

0.02.

Symbol

Testconditons

V(BR)CBO IC=100ìA

V(BR)CEO IC=10mA

V(BR)EBO IE=100ìA

ICBO VCB=10V

IEBO VEB=4V

IC=0.1A, IB=1mA

IC=0.1A, IB=0.5mA

VCE(sat) IC=1A, IB=50mA

IC=3A, IB=20mA

IC=4A, IB=50mA

VBE(sat) IC=3A, IB=20mA

VBE(on) IC=3A, VCE=2V

IC=0.1A, VCE=2V

hFE IC=3A, VCE=2V

IC=10A, VCE=2V

fT IC=50mA, VCE=5V f=50MHz

Cibo VEB=0.5V, f=1MHz

Cobo VCB=10V, f=1MHz

t(on) IC=500mA, VCC=10V

t(off) IB1=50A,IB2=50mA

Marking

Marking

FZT688B

Transistors

Product specification

FZT688B

Min Typ Max Unit

12

V

12

V

5

V

0.1 ìA

0.1 ìA

0.04

0.06

0.18 V

0.35

0.40

1.1 V

1.0 V

500

400

100

150

MHz

200

pF

40

pF

40

ns

500

ns

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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