FST16060 데이터 시트보기 (PDF) - GeneSiC Semiconductor, Inc.
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FST16060 Datasheet PDF : 3 Pages
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Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 45 V to 100V VRRM
• Isolated to Plate
• Not ESD Sensitive
FST16045 thru FST160100
VRRM = 45 V - 100 V
IF(AV) = 160 A
TO-249AB Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
FST16045 FST16060 FST16080 FST160100 Unit
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
VRRM
VRMS
VDC
Tj
Tstg
45
60
80
100
V
32
42
57
70
V
45
60
80
100
V
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
FST16045
Average forward current (per
pkg)
Peak forward surge current (per
leg)
Maximum instantaneous
forward voltage (per leg)
Maximum Instantaneous
reverse current at rated DC
blocking voltage (per leg)
Thermal characteristics
Thermal resistance, junction -
case (per leg)
IF(AV)
IFSM
VF
IR
RΘJC
TC = 125 °C
tp = 8.3 ms, half sine
IFM = 80 A, Tj = 25 °C
Tj = 25 °C
Tj = 100 °C
Tj = 150 °C
160
1000
0.75
1
10
30
0.50
FST16060
160
1000
0.80
1
10
30
0.50
FST16080 FST160100 Unit
160
160
A
1000
1000
A
0.84
0.84
V
1
1
10
10
mA
30
30
0.50
0.50
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
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