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PCF85102C-2P 데이터 시트보기 (PDF) - Philips Electronics

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PCF85102C-2P
Philips
Philips Electronics Philips
PCF85102C-2P Datasheet PDF : 20 Pages
First Prev 11 12 13 14 15 16 17 18 19 20
Philips Semiconductors
256 × 8-bit CMOS EEPROMs with
I2C-bus interface
Product specification
PCF85102C-2; PCF85103C-2
9 LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VDD
VI
II
IO
Tstg
Tamb
supply voltage
input voltage on input pins
input current on input pins
output current
storage temperature
ambient temperature
CONDITIONS
Zi> 500
MIN.
0.3
VSS 0.8
65
40
MAX.
+6.5
+6.5
1
10
+150
+85
UNIT
V
V
mA
mA
°C
°C
10 CHARACTERISTICS
VDD = 2.5 to 6.0 V; VSS = 0 V; Tamb = 40 to +85 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
Supplies
VDD
supply voltage
IDDR
supply current read
IDDW
supply current E/W
IDDstb
standby supply current
SCL input (pin 6)
2.5
fSCL = 100 kHz
VDD = 2.5 V
VDD = 6.0 V
fSCL = 100 kHz
VDD = 2.5 V
VDD = 6.0 V
VDD = 2.5 V
VDD = 6.0 V
VIL
LOW-level input voltage
VIH
HIGH-level input voltage
ILI
input leakage current
fSCL
clock frequency
Ci
input capacitance
SDA input/output (pin 5)
VI = VDD or VSS
VI = VSS
0.8
0.7VDD
0
VIL
LOW-level input voltage
VIH
HIGH-level input voltage
VOL
LOW-level output voltage
ILO
output leakage current
Ci
input capacitance
Data retention time
0.8
0.7VDD
IOL = 3 mA; VDD(min)
VOH = VDD
VI = VSS
tD(ret)
data retention time
Tamb = 55 °C
10
MAX.
UNIT
6.0
V
60
µA
200
µA
0.6
mA
2.0
mA
3.5
µA
10
µA
+0.3VDD V
6.5
V
±1
µA
100
kHz
7
pF
+0.3VDD V
6.5
V
0.4
V
1
µA
7
pF
years
2000 Feb 15
11

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