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2SC4499S 데이터 시트보기 (PDF) - Renesas Electronics

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2SC4499S
Renesas
Renesas Electronics Renesas
2SC4499S Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
2SC4499(L)/(S)
Reverse Bias Area of Safe Operation
1.0
350 V, 1 A
0.8
0.6
400 V, 0.5 A
0.4
0.2
IB2 = –0.1 A
450 V, 0.1 A
0
100 200 300 400 500
Collector to emitter voltage VCE (V)
Typical Output Characteristics
0.5
50
0.4
40
30
0.3
20
0.2
10
5 mA
0.1
TC = 25°C
IB = 0
0
1
2
3
4
5
Collector to emitter voltage VCE (V)
Collector to Emitter Voltage vs.
Base to Emitter Resistance
600
IC = 1 mA
500
400
300
100
1k
10 k 100 k 1 M
Base to emitter resistance RBE ()
Typical Transfer Characteristics
1.0
VCE = 5 V
Ta = 25°C
0.8
0.6
0.4
0.2
0
0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)

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