GDU90-20721 데이터 시트보기 (PDF) - Dynex Semiconductor

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GDU90-20721

Gate Drive Unit

Dynex Semiconductor 

GDU 90-20721

TIMING CHARACTERISTICS

Symbol

t *†

1

t

2

t3*†

t4

t*

5

t6

t7

t*

8

t9

t10

t

11

t12

Parameter

No response pulse width of

input signal

Delay time emitter

current to receiver o/p

Turn-on delay emitter

current to 10% IFGM

IFGM pulse width

Minimum on time

10% IFGM to 90% IG(ON)

Receiver storage time

Turn-off delay.

Emitter current to 90% I

G(ON)

Minimum off time

90% I to 10% I

G(ON)

FGM

Delay time

Gate volts to o/p emitter current

Turn-off delay

Gate volts to test receiver o/p

Storage time

Gate volts to o/p emitter current

Turn-on delay

Gate volts to test receiver o/p

Conditions

Adjustable by R81 + R82

-

-

-

Adjustable by R37

-

-

Adjustable by R38

-

-

Measured at low IGQM

Measured at low IGQM

Min. Typ. Max. Units

2

-

3

µs

0.2

-

0.4

µs

5.0

-

5.8

µs

-

25

-

µs

80

-

110 µs

0.8

-

1.2

µs

1.5

-

2.3

µs

80

-

110 µs

-

0.2

-

µs

-

0.8

-

µs

-

0.11

-

µs

-

0.31

-

µs

* t1,t3,t5,t8 are factory settings. † Adjustment of t1 alters t3.

1. Varies with IGQM due to gate lead impedance.

Test circuit

t1

emitter current

t2

t6

Control card

receiver output

10µs

Gate current

dIFG/dt

t3

0V

Gate voltage

Control card emitter current

10%

t4

t5

Min. ON time

dIGQ/dt

-8V

t9

t7

90% IG(ON)

QGQT

t8

Min. OFF

-8V

t11

Test circuit receiver output

t10

t12

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