HM62W8511HCJP-10 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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HM62W8511HCJP-10

4M High Speed SRAM (512-kword × 8-bit)

Hitachi -> Renesas Electronics 

HM62W8511HC Series

AC Characteristics (Ta = 0 to +70°C, VCC = 3.3 V ± 0.3 V, unless otherwise noted.)

Test Conditions

• Input pulse levels: 3.0 V/0.0 V

• Input rise and fall time: 3 ns

• Input and output timing reference levels: 1.5 V

• Output load: See figures (Including scope and jig)

1.5 V

3.3 V

Dout Zo=50 Ω

RL=50 Ω

Dout

30 pF 353Ω

319Ω

5 pF

Output load (A)

Output load (B)

(for tCLZ, tOLZ, tCHZ, tOHZ, tWHZ, and tOW)

Read Cycle

Parameter

Read cycle time

Address access time

Chip select access time

Output enable to outpput valid

Output hold from address change

Chip select to output in low-Z

Output enable to output in low-Z

Chip deselect to output in high-Z

Output disable to output in high-Z

Symbol

t RC

t AA

t ACS

t OE

t OH

t CLZ

t OLZ

t CHZ

t OHZ

HM62W8511HC

-10

Min

Max

10

—

—

10

—

10

—

5

3

—

3

—

0

—

—

5

—

5

Unit

ns

ns

ns

ns

ns

ns

ns

ns

ns

Notes

1

1

1

1

7

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