HM62W8511CJP10 데이터 시트보기 (PDF) - Renesas Electronics

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HM62W8511CJP10

4M High Speed SRAM (512-kword × 8-bit)

Renesas Electronics 

HM62W8511HC Series

4M High Speed SRAM (512-kword × 8-bit)

ADE-203-1201C (Z)

Rev. 2.0

Nov. 9, 2001

Description

The HM62W8511HC is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high

speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing

technology. It is most appropriate for the application which requires high speed, high density memory and

wide bit width configuration, such as cache and buffer memory in system. The HM62W8511HC is packaged

in 400-mil 36-pin SOJ for high density surface mounting.

Features

• Single supply : 3.3 V ± 0.3 V

• Access time : 10/12 ns (max)

• Completely static memory

 No clock or timing strobe required

• Equal access and cycle times

• Directly TTL compatible

 All inputs and outputs

• Operating current : 115/100 mA (max)

• TTL standby current : 40 mA (max)

• CMOS standby current: 5 mA (max)

: 1 mA (max) (L-version)

• Data retention current : 0.6 mA (max) (L-version)

• Data retention voltage : 2 V (min) (L-version)

• Center VCC and VSS type pin out

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