HM62W8511CJP10 데이터 시트보기 (PDF) - Renesas Electronics

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HM62W8511CJP10

4M High Speed SRAM (512-kword × 8-bit)

Renesas Electronics 

Operation Table

CS

H

L

L

L

L

Note:

OE

WE

Mode

×

×

Standby

H

H

Output disable

L

H

Read

H

L

Write

L

L

Write

H: VIH, L: VIL, ×: VIH or VIL

VCC current

ISB, ISB1

ICC

I

CC

I

CC

ICC

HM62W8511HC Series

I/O

High-Z

High-Z

Dout

Din

Din

Ref. cycle

—

—

Read cycle (1) to (3)

Write cycle (1)

Write cycle (2)

Absolute Maximum Ratings

Parameter

Symbol

Value

Supply voltage relative to V

SS

Voltage on any pin relative to VSS

Power dissipation

Operating temperature

V

CC

VT

PT

Topr

–0.5 to +4.6

–0.5*1 to VCC+0.5*2

1.0

0 to +70

Storage temperature

Tstg

–55 to +125

Storage temperature under bias

Tbias

–10 to +85

Notes:

1.

V

T

(min)

=

–2.0

V

for

pulse

width

(under

shoot)

≤

6

ns.

2. VT (max) = VCC+2.0 V for pulse width (over shoot) ≤ 6 ns.

Unit

V

V

W

°C

°C

°C

Recommended DC Operating Conditions

(Ta = 0 to +70°C)

Parameter

Symbol Min

Typ

Supply voltage

VCC*3

3.0

3.3

V *4

0

0

SS

Input voltage

V

2.0

—

IH

VIL

–0.5*1

—

Notes: 1. VIL (min) = –2.0 V for pulse width (under shoot) ≤ 6 ns.

2. VIH (max) = VCC+2.0 V for pulse width (over shoot) ≤ 6 ns.

3. The supply voltage with all VCC pins must be on the same level.

4. The supply voltage with all VSS pins must be on the same level.

Max

3.6

0

V + 0.5*2

CC

0.8

Unit

V

V

V

V

Rev. 2, Nov. 2001, page 5 of 14

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