IL300 데이터 시트보기 (PDF) - Siemens AG
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IL300 Datasheet PDF : 8 Pages
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IL300 Terms
KI—Servo Gain
The ratio of the input photodiode current (IP1) to the LED cur-
rent(IF). i.e., K1 = IP1/ IF.
K2—Forward Gain
The ratio of the output photodiode current ( IP2) to the LED
current (IF), i.e., K2 = IP2/ IF.
K3—Transfer Gain
The Transfer Gain is the ratio of the Forward Gain to the Servo
gain, i.e., K3 = K2/K1.
∆K3—Transfer Gain Linearity
The percent deviation of the Transfer Gain, as a function of
LED or temperature from a specific Transfer Gain at a fixed
LED current and temperature.
Photodiode
A silicon diode operating as a current source. The output cur-
rent is proportional to the incident optical flux supplied by the
LED emitter. The diode is operated in the photovoltaic or pho-
toconductive mode. In the photovoltaic mode the diode func-
tions as a current source in parallel with a forward biased
silicon diode.
The magnitude of the output current and voltage is depen-
dant upon the load resistor and the incident LED optical flux.
When operated in the photoconductive mode the diode is
connected to a bias supply which reverse biases the silicon
diode. The magnitude of the output current is directly propor-
tional to the LED incident optical flux.
LED (Light Emitting Diode)
An infrared emitter constructed of AlGaAs that emits at 890
nm operates efficiently with drive current from 500 µA to 40
mA. Best linearity can be obtained at drive currents between
5 mA to 20 mA. Its output flux typically changes by –0.5%/°C
over the above operational current range.
Absolute Maximum Ratings
Symbol
Emitter
Power Dissipation
(TA=25°C)
Derate Linearly from 25°C
PLED
Forward Current
lf
Surge Current
lpk
(Pulse width <10µs)
Reverse Voltage
VR
Thermal Resistance
Rth
Junction Temperature
TJ
Detector
Power Dissipation
Derate linearly from 25°C
PDET
Reverse Voltage
VR
Junction Temperature
TJ
Thermal Resistance
Rth
Coupler
Total Package
PT
Dissipation at 25°C
Derate linearly from 25°C
Storage Temperature
TS
Operating Temperature
TOP
Isolation Test Voltage
Isolation Resistance
VIO=500 V, TA=25°C
VIO=500 V, TA=100°C
Min.
–55
–55
5300
1012
1011
Max. Unit
160 mW
2.13 mW/°C
60
mA
250 mA
5
V
470 °C/W
100 °C
50
mA
0.65
50
100
1500
mW/°C
V
°C
°C/W
210 mW
2.8
mW/°C
150 °C
100 °C
VACRMS
Ω
Ω
IL300
5–2
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