UMZ1N 데이터 시트보기 (PDF) - Unisonic Technologies
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UMZ1N Datasheet PDF : 3 Pages
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UMZ1N
Preliminary
DUAL TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
LIMITS
TR1
TR2
UNIT
Collector-Base Voltage
VCBO
60
-60
V
Collector-Emitter Voltage
VCEO
50
-50
V
Emitter-Base Voltage
VEBO
7
-6
V
Collector Current
IC
0.15
-0.15
A
Collector Power Dissipation
Pc
0.15
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C)
PARAMETER
TR1
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
TR2
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
SYMBOL
TEST CONDITIONS
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(SAT)
hFE
fT
Cob
IC=50µA
IC=1mA
IE=50µA
VCB=60V
VEB=7V
IC/IB=50mA/5mA
VCE=6V, IC=1mA
VCE=12V, IE=-2mA, f=100MHz
VCB=12V, IE=0A, f=1MHz
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(SAT)
hFE
fT
Cob
IC=-50µA
IC=-1mA
IE=-50µA
VCB=-60V
VEB=-6V
IC/IB=-50mA/-5mA
VCE=-6V, IC=-1mA
VCE=-12V, IE=2mA, f=100MHz
VCB=-12V,IE=0A, f=1MHz
MIN TYP MAX UNIT
60
V
50
V
7
V
0.1 µA
0.1 µA
0.4 V
120
560
180
MHz
2 3.5 pF
-60
V
-50
V
-6
V
-0.1 µA
-0.1 µA
-0.5 V
120
560
140
MHz
4.0 5.0 pF
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