KTC3879 데이터 시트보기 (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

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KTC3879

TRANSISTOR (NPN)

Shenzhen Jin Yu Semiconductor Co., Ltd.  

KTC3879

TRANSISTOR (NPN)

FEATURES

 High Power Gain

APPLICATIONS

 High Frequency Application

 HF,VHF Band Amplifier Application

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

VCBO Collector-Base Voltage

35

VCEO Collector-Emitter Voltage

30

VEBO Emitter-Base Voltage

4

IC

Collector Current

50

PC

Collector Power Dissipation

150

RΘJA Thermal Resistance From Junction To Ambient

833

Tj

Junction Temperature

Tstg

Storage Temperature

150

-55～+150

Unit

V

V

V

mA

mW

℃/W

℃

℃

SOT–23

1. BASE

2. EMITTER

3. COLLECTOR

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Collector-base breakdown voltage

V(BR)CBO IC=100µA, IE=0

35

Collector-emitter breakdown voltage

V(BR)CEO IC=100µA, IB=0

30

Emitter-base breakdown voltage

V(BR)EBO IE=100µA, IC=0

4

Collector cut-off current

ICBO

VCB=30V, IE=0

Collector cut-off current

ICEO

VCE=25V, IB=0

Emitter cut-off current

IEBO

VEB=4V, IC=0

DC current gain

hFE

VCE=12V, IC=2mA

40

Collector-emitter saturation voltage

VCE(sat) IC=10mA, IB=1mA

Base-emitter saturation voltage

VBE(sat)

IC=10m A, IB=1mA

Transition frequency

fT

VCE=10V,IC=1mA

100

CLASSIFICATION OF hFE

RANK

RANGE

MARKING

R

40–80

RR

O

70–140

RO

Typ

Max

Unit

V

V

V

0.1

µA

0.2

µA

1

µA

240

0.4

V

1

V

MHz

Y

120–240

RY

１　

JinYu

semiconductor

www.htsemi.com

Ｄａｔｅ：２０１１／０５

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