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LDFM50DT-TR 데이터 시트보기 (PDF) - STMicroelectronics

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LDFM50DT-TR
ST-Microelectronics
STMicroelectronics ST-Microelectronics
LDFM50DT-TR Datasheet PDF : 36 Pages
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LDFM
Electrical characteristics
5
Electrical characteristics
TJ = 25 °C, VIN = VOUT(NOM) + 1 Va, CIN = 1 µF, COUT = 2.2 µF, ILOAD = 10 mA, VEN = 2 V,
unless otherwise specified.
Symbol
Table 5: Electrical characteristics for LDFM (fixed versions)
Parameter
Test conditions
Min.
Typ.
Max. Unit
VIN
VOUT
VOUT
∆VOUT
∆VOUT
VDROP
IQ
ISC
VEN
IEN
PG
Operating input voltage
VOUT accuracy,
PPAK and DFN6
versions
VOUT accuracy,
DPAK version
Static line regulation
Static load regulation
Dropout voltage (2)
Quiescent current
Short-circuit current
Enable input logic low
Enable input logic high
Enable pin input current
Power Good output
threshold
VOUT+1 V≤ VIN≤ 16 V(1)
ILOAD = 10 mA
10 mA ≤ ILOAD≤ 500 mA
TJ = -40 to 125 °C
VOUT+1 V(1) ≤ VIN ≤ 16 V
ILOAD = 10 mA
10 mA ≤ ILOAD ≤ 500 mA
TJ = -40 to 125 °C
VOUT+1 V(1) ≤ VIN ≤ 16 V
VOUT+1 V(1) ≤ VIN ≤ 16 V,
TJ = -40 to 125 °C
10 mA ≤ ILOAD ≤ 500 mA
10 mA ≤ ILOAD ≤ 500 mA,
TJ = -40 to 125 °C
10 mA ≤ ILOAD ≤ 500 mA,
TJ = -40 to 125 °C
DFN6 version
ILOAD = 500 mA,
-40 °C < TJ < 125 °C
ON mode: VEN = 2 V
ILOAD= 10 mA to 500 mA,
TJ = -40 to 125 °C
OFF Mode:VEN = GND,
PPAK and DFN versions
OFF Mode:VEN = GND,
PPAK and DFN versions,
-40 °C < TJ < 125 °C
VIN = 2.5 V to 16 V,
-40 °C<TJ<125 °C
VEN = VIN
Rising edge
2.5
16
V
-1
1
%
-1.5
1.5
%
-2
2
%
-3
3
%
0.01
%/V
0.04
0.1
0.15
%/A
0.4
10
mV
125
300
mV
200
800
30
µA
120
0.8
A
0.8
V
2
5
10
µA
0.92*
V
VOUT
a For VOUT < 1.5 V; VIN = 2.5 V.
DocID023585 Rev 4
7/36

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