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BA887 데이터 시트보기 (PDF) - Infineon Technologies
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BA887
Silicon PIN Diode
Infineon Technologies
BA887 Datasheet PDF : 3 Pages
1
2
3
BA 887
Characteristics per Diode
at
T
A
= 25
°
C, unless otherwise specified.
Parameter
Symbol
Reverse current
I
R
V
R
= 30 V
Forward voltage
V
F
I
F
= 100 mA
Diode capacitance
C
T
V
R
= 10 V,
f
= 1 MHz
V
R
= 0 V,
f
= 100 MHz
Forward resistance
f
= 100 MHz
r
f
I
F
= 1.5 mA
I
F
= 10 mA
Charge carrier lifetime
τ
L
I
F
= 10 mA,
I
R
= 6 mA,
I
R
= 3 mA
min.
–
–
–
–
–
–
–
Value
Unit
typ.
max.
nA
–
20
V
0.9
–
pF
0.52
–
0.27
–
Ω
22
–
4.2
–
µ
s
2.5
–
Package Outline
SOT-23
Semiconductor Group
2
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