BA887 데이터 시트보기 (PDF) - Siemens AG

부품명

상세내역

제조사

BA887

Silicon PIN Diode

Siemens AG 

BA 887

Characteristics per Diode

at TA = 25 °C, unless otherwise specified.

Parameter

Symbol

Reverse current

IR

VR = 30 V

Forward voltage

VF

IF = 100 mA

Diode capacitance

CT

VR = 10 V, f = 1 MHz

VR = 0 V, f = 100 MHz

Forward resistance f = 100 MHz rf

IF = 1.5 mA

IF = 10 mA

Charge carrier lifetime

τL

IF = 10 mA, IR = 6 mA, IR = 3 mA

min.

–

–

–

–

–

–

–

Value

Unit

typ.

max.

nA

–

20

V

0.9

–

pF

0.52

–

0.27

–

Ω

22

–

4.2

–

µs

2.5

–

Package Outline

SOT-23

Semiconductor Group

2

Share Link: