CR10TE 데이터 시트보기 (PDF) - Unspecified
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CR10TE Datasheet PDF : 3 Pages
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Phototransistors
TO-46 Flat Window Package
VTT1015 VTT1016 VTT1017
TO-46 Lensed Package
VTT1115 VTT1116
VTT1117
Table Key
IC
ICEO
VBR(CEO)
VBR(ECO)
VCE(SAT)
tR/tF
Light Current
Dark Current H=0
Collector Breakdown IC=100 µA, H=0
Emitter Breakdown IE=100 µA, H=0
Saturation Voltage IC=1 mA, H=400 fc
Rise/Fall Time IC=1 mA, RL=100 Ω
.05’’ x .05’’ NPN Phototransistors
Technical Specification
Part
Number
Light Current
H fc (mW/cm2)
mA min.
VCE=5 V
VTT1015H 0.4
100 (5)
VTT1016H
1
100 (5)
VTT1017H 2.5
100 (5)
VTT1115H
1
20 (1)
VTT1116H
2
20 (1)
VTT1117H
4
20 (1)
Dark Current
nA
VCE
max. Volts
25
20
25
20
25
10
100 10
100 10
100 10
Electro-Optical Characteristics @ 25°C
VBR(CEO)
Volts min.
40
VBR(ECO)
Volts min.
6
VCE(SAT)
Volts max.
0.4
Angular
tR/tF Response
µsec, typ. θ1/2
5
±35˚
30
6
0.4
5
±35˚
20
4
0.4
8
±35˚
30
6
0.4
5
±15˚
30
4
0.4
8
±15˚
30
4
0.4
8
±15˚
I
Technical Specification
Part
Number
CR10TE
Package*
Ceramic
SMD (A1)
Spectral
Range
400–1070
Peak Sensitivity
Dark
Wavelength Vce P-Current Current
(nm)
(V)
(nA)
850
40
3
400
Ceramic
CR50TE
SMD (A2)
400–1070
850
40
3
400
* All packages are listed on our website.
Active
Area
(mm2)
0.19
0.19
Rise/Fall
Time
Orientation
10/10 High Vce
10/10 High Vce
CR10TE
• Surface mounting device
• Solid state ceramic chip
• High thermal conductivity
• Special type (CR10TE-DLF) with
daylight filter on request
www.optoelectronics.perkinelmer.com 21
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