MGSF3455XT1 데이터 시트보기 (PDF) - ON Semiconductor

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MGSF3455XT1

Low RDS(on) Small-Signal MOSFETs Single P-Channel Field Effect Transistors

ON Semiconductor 

MGSF3455XT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 10 μA)

V(BR)DSS

30

Zero Gate Voltage Drain Current

(VDS = 30 Vdc, VGS = 0 Vdc)

(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 70°C)

IDSS

—

—

Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IGSS

—

ON CHARACTERISTICS(1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 μAdc)

VGS(th)

1.0

Static Drain−to−Source On−Resistance

(VGS = 10 Vdc, ID = 1.45 A)

(VGS = 4.5 Vdc, ID = 1.2 A)

rDS(on)

—

—

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 5.0 V)

Ciss

—

Output Capacitance

(VDS = 5.0 V)

Coss

—

Transfer Capacitance

(VDG = 5.0 V)

Crss

—

SWITCHING CHARACTERISTICS(2)

Turn−On Delay Time

td(on)

—

Rise Time

Turn−Off Delay Time

(VDD = 15 Vdc, ID = 1.0 A,

VGEN = 10 V, RL = 10 Ω)

tr

—

td(off)

—

Fall Time

tf

—

Gate Charge

QT

—

SOURCE−DRAIN DIODE CHARACTERISTICS

Continuous Current

IS

—

Pulsed Current

ISM

—

Forward Voltage(2)

VSD

—

(1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

Typ

Max

Unit

Vdc

—

—

μAdc

—

1.0

—

5.0

—

±100

nAdc

—

0.080

0.134

—

0.100

0.190

Vdc

Ohms

90

—

pF

50

—

10

—

10

20

ns

15

30

20

35

10

20

3000

—

pC

—

1.0

A

—

5.0

A

0.85

—

V

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