MGSF1N03LT1G(2012) 데이터 시트보기 (PDF) - ON Semiconductor
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MGSF1N03LT1G Datasheet PDF : 5 Pages
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MGSF1N03L, MVGSF1N03L
Power MOSFET
30 V, 2.1 A, Single N−Channel, SOT−23
These miniature surface mount MOSFETs low RDS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry. Typical
applications are dc−dc converters and power management in portable
and battery−powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
Features
• Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Miniature SOT−23 Surface Mount Package Saves Board Space
• AEC−Q101 Qualified and PPAP Capable − MVGSF1N03LT1
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain
Current RqJL
Steady TA = 25°C
ID
State TA = 85°C
2.1
A
1.5
Power Dissipation
RqJL
Steady TA = 25°C PD
State
0.69
W
Continuous Drain
Current (Note 1)
Steady TA = 25°C
ID
State TA = 85°C
1.6
A
1.2
Power Dissipation
(Note 1)
TA = 25°C PD
0.42
W
Pulsed Drain Current
ESD Capability
(Note 3)
tp = 10 ms
IDM
6.0
A
C = 100 pF,
ESD
125
V
RS = 1500 W
Operating Junction and Storage Temperature TJ, TSTG −55 to 150 °C
Source Current (Body Diode)
IS
2.1
A
Lead Temperature for Soldering Purposes
TL
260
°C
(1/8” from case for 10 sec)
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Foot − Steady State
RqJL
180 °C/W
Junction−to−Ambient − Steady State (Note 1) RqJA
300
Junction−to−Ambient − t < 10 s (Note 1)
RqJA
250
Junction−to−Ambient − Steady State (Note 2) RqJA
400
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 650 mm2, 1 oz. Cu pad size.
2. Surface−mounted on FR4 board using 50 mm2, 1 oz. Cu pad size.
3. ESD Rating Information: HBM Class 0.
http://onsemi.com
V(BR)DSS
30 V
RDS(on) TYP
80 mW @ 10 V
125 mW @ 4.5 V
N−Channel
D
ID MAX
2.1 A
G
S
MARKING DIAGRAM/
PIN ASSIGNMENT
3
Drain
1
SOT−23
N3 M G
G
CASE 318
STYLE 21
1
Gate
2
Source
N3 = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MGSF1N03LT1G
MGSF1N03LT3G
SOT−23
Pb−Free
SOT−23
(Pb−Free)
MVGSF1N03LT1G SOT−23
(Pb−Free)
3000 / Tape &
Reel
10000 / Tape &
Reel
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
1
September, 2012 − Rev. 10
Publication Order Number:
MGSF1N03LT1/D
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