MJD31 데이터 시트보기 (PDF) - ON Semiconductor
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MJD31 Datasheet PDF : 11 Pages
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MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,
MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)
TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN)
1000
150°C
100
25°C
−55°C
VCE = 4 V
1000
150°C
100
25°C
−55°C
VCE = 2 V
10
10
1
1
0.01
0.1
1
10
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 6. DC Current Gain at VCE = 4 V
IC, COLLECTOR CURRENT (A)
Figure 7. DC Current Gain at VCE = 2 V
0.6
IC/IB = 10
0.5
0.4
150°C
0.3
0.2
25°C
0.1
−55°C
0
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 8. Collector−Emitter Saturation Voltage
1.2
1.1 IC/IB = 10
1.0
0.9
−55°C
0.8
25°C
0.7
0.6
0.5
150°C
0.4
0.3
0.2
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 9. Base−Emitter Saturation Voltage
1.2
VCE = 5 V
1.1
1.0
0.9
0.8
−55°C
0.7
25°C
0.6
0.5
150°C
0.4
0.3
0.2
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 10. Base-Emitter “On” Voltage
2
TA =
25°C
1.6
1.2
100 mA 500 mA
0.8
IC = 3 A
1A
0.4
10 mA
0
10
0.01
0.1
1
10
100
1000
IB, BASE CURRENT (mA)
Figure 11. Collector Saturation Region
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