MJD31 데이터 시트보기 (PDF) - ON Semiconductor

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MJD31

Complementary Power Transistors DPAK For Surface Mount Applications

ON Semiconductor 

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,

MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)

TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN)

1000

Cib

100

Cob

10

100

TA = 25°C

10

VCE = 5 V

TA = 25°C

1

0.1

1

10

VR, REVERSE VOLTAGE (V)

Figure 12. Capacitance

10

1

100

0.001

0.01

0.1

1

10

IC, COLLECTOR CURRENT (A)

Figure 13. Current−Gain−Bandwidth Product

1

0.1

0.01

1

10

100

VCE, COLLECTOR−EMITTER VOLTAGE (V)

Figure 14. Safe Operating Area

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