MJD32C-13 데이터 시트보기 (PDF) - Diodes Incorporated.

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MJD32C-13

100V PNP HIGH VOLTAGE TRANSISTOR IN TO252

Diodes Incorporated. 

MJD32C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Collector-Emitter Breakdown Voltage (Note 10)

Collector Cut-off Current

Collector Cut-off Current

Emitter Cut-off Current

Collector-Emitter Saturation Voltage (Note 10)

Base-Emitter Turn-On Voltage (Note 10)

DC Current Gain (Note 10)

Current Signal Current Gain

Current Gain-Bandwidth Product

Symbol Min Typ

BVCEO -100



ICEO





ICES





IEBO





VCE(sat)





VBE(on)





hFE

25

10



Hfe

20



fT

3.0



Note:

10. Measured under pulsed conditions. Pulse width  300μs. Duty cycle 2%.

Max



-1

-1

-1

-1.2

-1.8



50





Unit

V

μA

μA

μA

V

V





MHz

Test Condition

IC = -30mA, IB = 0

VCB = -60V, IB = 0

VCE = -100V, VEB = 0

VEB = -5V, IC = 0

IC = -3.0A, IB = -375mA

IC = -3A, VCE = -4V

VCE = -4V, IC = -1A

VCE = -4V, IC = -3A

VCE = -10V, IC = -0.5A, f = 1KHz

IC = -500mA, VCE = -10V, f = 1MHz

MJD32C

Document number: DS31624 Rev. 8 - 2

4 of 7

www.diodes.com

January 2018

© Diodes Incorporated

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