MJD41C 데이터 시트보기 (PDF) - ON Semiconductor
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MJD41C Datasheet PDF : 7 Pages
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MJD41C (NPN), MJD42C (PNP)
TA TC
2.5 25
TYPICAL CHARACTERISTICS
VCC
+ 30 V
2 20
1.5 15
TC
1 10 TA SURFACE MOUNT
0.5 5
00
25
50
75
100
125
T, TEMPERATURE (°C)
Figure 1. Power Derating
+11 V
0
25 ms
- 9 V
RB
51
RC
SCOPE
D1
tr, tf ≤ 10 ns
DUTY CYCLE = 1%
- 4 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
MSB5300 USED ABOVE IB ≈ 100 mA
150
MSD6100 USED BELOW IB ≈ 100 mA
REVERSE ALL POLARITIES FOR PNP.
Figure 2. Switching Time Test Circuit
500
300
200
TJ = 150°C
VCE = 2 V
100
70
25°C
50
30
20
- 55°C
10
7
5
0.06 0.1
0.2 0.3 0.4 0.6 1
2
IC, COLLECTOR CURRENT (AMP)
Figure 3. DC Current Gain
46
2
1
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.06 0.1
TJ = 25°C
VCC = 30 V
IC/IB = 10
tr
td @ VBE(off) ≈ 5 V
0.2
0.4 0.6 1
2
IC, COLLECTOR CURRENT (AMP)
Figure 4. Turn−On Time
46
1.4
VCE = 4 V
1.2
1.0
0.8 −55°C
−40°C
0.6
25°C
0.4 80°C
0.2 TA = 150°C
0
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 5. Base Emitter Voltage vs. Collector
Current
1.4
IC/IB = 10
1.2
1.0
0.8 −55°C
−40°C
0.6 25°C
0.4 80°C
0.2 TA = 150°C
0
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 6. Base Emitter Saturation Voltage vs.
Collector Current
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