MJE210G 데이터 시트보기 (PDF) - ON Semiconductor
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MJE210G Datasheet PDF : 6 Pages
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MJE200G (NPN),
MJE210G (PNP)
Complementary Silicon
Power Plastic Transistors
These devices are designed for low voltage, low−power, high−gain
audio amplifier applications.
Features
• High DC Current Gain
• Low Collector−Emitter Saturation Voltage
• High Current−Gain − Bandwidth Product
• Annular Construction for Low Leakage
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
VCEO
VCB
VEB
IC
ICM
IB
PD
40
Vdc
25
Vdc
8.0
Vdc
5.0
Adc
10
Adc
1.0
Adc
15
W
0.12
mW/_C
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
PD
1.5
W
0.012
mW/_C
Operating and Storage Junction
Temperature Range
TJ, Tstg –65 to +150
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Thermal Resistance, Junction−to−Case
RqJC
8.34
Thermal Resistance, Junction−to−Ambient RqJA
83.4
Unit
_C/W
_C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
1
December, 2013 − Rev. 15
http://onsemi.com
5.0 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
25 VOLTS, 15 WATTS
PNP
COLLECTOR 2, 4
NPN
COLLECTOR 2, 4
3
BASE
EMITTER 1
3
BASE
EMITTER 1
TO−225
CASE 77−09
STYLE 1
123
MARKING DIAGRAM
YWW
JE2x0G
Y
= Year
WW = Work Week
JE2x0 = Device Code
x = 0 or 1
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
MJE200G
TO−225
(Pb−Free)
500 Units / Box
MJE210G
TO−225
(Pb−Free)
500 Units / Box
MJE210TG
TO−225
(Pb−Free)
500 Units / Box
Publication Order Number:
MJE200/D
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