MJF18006 데이터 시트보기 (PDF) - Inchange Semiconductor
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MJF18006 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
MJF18006
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS)
VCEsat-1
VCEsat-2
VBEsat-1
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
IC=0.1A; L=25mH
IC=1.5A ;IB=0.15A
TC=125℃
IC=3A ;IB=0.6A
TC=125℃
IC=1.5A; IB=0.15A
450
V
0.6
0.65
V
0.7
0.8
V
1.2
V
VBEsat-2 Base-emitter saturation voltage
IC=3A; IB=0.6A
1.3
V
ICES
Collector cut-off current
VCES=RatedVCES;
VEB=0
VCES=800V
TC=125℃
0.1
0.5
mA
0.1
ICEO
Collector cut-off current
VCE=RatedVCEO; IB=0
0.1
mA
IEBO
Emitter cut-off current
VEB=9V; IC=0
0.1
mA
hFE-1
DC current gain
IC=0.5A ; VCE=5V
14
34
hFE-2
DC current gain
IC=3A ; VCE=1V
6
hFE-3
DC current gain
IC=1.5A ; VCE=1V
11
hFE-4
DC current gain
IC=10mA ; VCE=5V
10
fT
Transition frequency
IC=0.5A ; VCE=10V;f=1.0MHz
14
MHz
COB
Collector outoput capacitance
IE=0 ; VCB=10V;f=1.0MHz
Switching times resistive load,Duty Cycle≤10%,Pulse Width=20μs
75
pF
ton
Turn-on time
toff
Turn-off time
ton
Turn-on time
toff
Turn-off time
VCC=300V ,IC=3A
IB1=0.6A; IB2=1.5A
VCC=300V ,IC=1.3A
IB1=0.13A; IB2=0.65A
90
180
ns
1.7
2.5
μs
0.2
0.3
μs
1.2
2.5
μs
2
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