MJ16010 데이터 시트보기 (PDF) - ON Semiconductor
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MJ16010 Datasheet PDF : 12 Pages
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MJ16010 MJW16010 MJ16012 MJW16012
GUARANTEED SAFE OPERATING AREA LIMITS
IC
VCE
IB
IC(pk)
VCE(pk)
90% VCE(pk) 90% IC(pk)
tsv
trv
tfi
tti
tc
90% IB1
10% VCE(pk) 10%
IC(pk) 2% IC
TIME
Figure 13. Inductive Switching Measurements
10
9
8
7
6
IB1 = 2.0 A
5
4
3
1.0 A
2
1
IC = 10 A
TC = 25°C
0
0
1.0
2.0
3.0
4.0
5.0
VBE(off), REVERSE BASE VOLTAGE (VOLTS)
Figure 14. Peak Reverse Base Current
SAFE OPERATING AREA INFORMATION
20
10
MJ16010/12
5.0
MJW16010,12
2.0
dc
1.0
TC = 25°C
0.5
10õs
1.0Ăms
0.1
0.05
0.02
5.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
10
20 30 50 70 100
200 300 450
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 15. Maximum Forward Bias
*βf =
IC
IB1
Safe Operating Area
FORWARD BIAS
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 15 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC ≥ 25_C. Second breakdown limitations do
not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 15 may be found at
any case temperature by using the appropriate curve on
Figure 18.
TJ(pk) may be calculated from the data in Figure 17. At
high case temperatures, thermal limitations will reduce the
20
18
14
10
βf* ≥ 4.0
TC ≤ 100°C
6.0
VBE(off) = 0 V
1.0 to 5.0 V
2.0
0
100
150 200 250 350 450 600 700 850
VCE(pk), PEAK COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 16. Maximum Reverse Bias
Safe Operating Area
power that can be handled to values less than the limitations
imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases,
with the base–to–emitter junction reverse biased. Under
these conditions the collector voltage must be held to a safe
level at or below a specific value of collector current. This
can be accomplished by several means such as active
clamping, RC snubbing, load line shaping, etc. The safe
level for these devices is specified as Reverse Bias Safe
Operating Area and represents the voltage current condition
allowable during reverse biased turnoff. This rating is
verified under clamped conditions so that the device is never
subjected to an avalanche mode. Figure 16 gives the
RBSOA characteristics.
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