MJF44H11(2002) 데이터 시트보기 (PDF) - ON Semiconductor
부품명
상세내역
제조사
MJF44H11 Datasheet PDF : 8 Pages
| |||
MJF44H11 (NPN),
MJF45H11 (PNP)
Preferred Devices
Complementary
Power Transistors
For Isolated Package Applications
. . . for general purpose power amplification and switching such as
output or driver stages in applications such as switching regulators,
converters and power amplifiers.
• Low Collector-Emitter Saturation Voltage -
VCE(sat) = 1.0 V (Max) @ 8.0 A
• Fast Switching Speeds
• Complementary Pairs Simplifies Designs
MAXIMUM RATINGS
Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector-Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter-Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current - Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ - Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation
@ TC = 25°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Derate above 25°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ @ TA = 25°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Derate above 25°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction
Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction to Ambient
Symbol
VCEO
VEB
IC
PD
PD
TJ, Tstg
Symbol
RqJC
RqJA
Value
80
5
10
20
36
1.67
2.0
0.016
- 55 to
150
Max
3.5
62.5
Unit
Vdc
Vdc
Adc
Watts
W/°C
Watts
W/°C
°C
Unit
°C/W
°C/W
http://onsemi.com
SILICON POWER
TRANSISTORS
10 AMPERES
80 VOLTS
36 WATTS
MARKING DIAGRAM
1
2
3
STYLE 2:
PIN 1.
2.
3.
BASE
COLLECTOR
EMITTER
ISOLATED TO-220
CASE 221D
PLASTIC
F4xH11
LLYWW
F4xH11 = Specific Device Code
x
= 4 or 5
LL
= Location Code
Y
= Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
MJF44H11
TO-220
50 Units/Rail
MJF45H11
TO-220
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2002
1
December, 2002 - Rev. 2
Publication Order Number:
MJF44H11/D
Share Link: 