MJB44H11G(2013) 데이터 시트보기 (PDF) - ON Semiconductor
부품명
상세내역
제조사
MJB44H11G Datasheet PDF : 6 Pages
| |||
MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (IC = 30 mA, IB = 0)
Collector Cutoff Current (VCE = Rated VCEO, VBE = 0)
Emitter Cutoff Current (VEB = 5 Vdc)
ON CHARACTERISTICS
Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc)
Base−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc)
DC Current Gain (VCE = 1 Vdc, IC = 2 Adc)
DC Current Gain (VCE = 1 Vdc, IC = 4 Adc)
DYNAMIC CHARACTERISTICS
Collector Capacitance (VCB = 10 Vdc, ftest = 1 MHz)
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11
Gain Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz)
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11
SWITCHING TIMES
Delay and Rise Times(IC = 5 Adc, IB1 = 0.5 Adc)
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11
Storage Time(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11
Fall Time(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11
Symbol
VCEO(sus)
ICES
IEBO
VCE(sat)
VBE(sat)
hFE
Ccb
fT
td + tr
ts
tf
Min
Typ
Max Unit
80
−
−
Vdc
−
−
10
mA
−
−
50
mA
−
−
1.0
Vdc
−
−
1.5
Vdc
60
−
−
−
40
−
−
pF
−
130
−
−
230
−
MHz
−
50
−
−
40
−
ns
−
300
−
−
135
−
ns
−
500
−
−
500
−
ns
−
140
−
−
100
−
1.0
0.7 D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.05
0.02
0.03
0.02 0.01
SINGLE PULSE
0.01
0.01 0.02
0.05 0.1 0.2
ZqJC(t) = r(t) RqJC
RqJC = 1.56°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.5 1.0 2.0
5.0 10 20
t, TIME (ms)
50 100 200
500 1.0 k
Figure 1. Thermal Response
http://onsemi.com
2
Share Link: 