MJB45H11 데이터 시트보기 (PDF) - Inchange Semiconductor

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MJB45H11

Silicon PNP Power Transistor

Inchange Semiconductor 

isc Silicon PNP Power Transistor

INCHANGE Semiconductor

MJB45H11

DESCRIPTION

·Low Collector-Emitter saturation voltage

·Pb-free package are available

·Fast switching speed

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·General purpose amplification and switching such as

out or driver stages in applications such as switching

regulators,converters and power amplifiers

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCEO Collector-Emitter Voltage

-80

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-10

A

ICP

Collector Current-Pulse

PC

Total Power Dissipation

@ Ta=25℃

PC

Total Power Dissipation

@ TC=25℃

TJ

Junction Temperature

-20

A

2

W

50

W

150

℃

Tstg

Storage Temperature Range

-55~150 ℃

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

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